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Seiko NPC announced the thesis of Thermopile Infrared Sensor at 2008 ISSCC.
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Seiko NPC announced the thesis of Thermopile Infrared Sensor at 2008 IEEE ISSCC (International Solid-State Circuit Conference).
ISSCC, the largest academic society of the latest semiconductor technology, was held during February 3rd to 7th in 2008 at the Marriott hotel in San Francisco, CA, United States.
Seiko NPC presented the paper of following content by the Technical Direction (TD) session about Thermopile Infrared Sensor that had been concentrated on development in recent years.
We are going to make it commercialize in the field concerned.

TD:MOS MEDLEY
Chair:Glenn Gulak, University of Toronto, Toronto, Canada
Associate Chair: Werner Weber, Infineon Technologies, Munich, Germany
18.1 A 64/256-Element Thermopile Infrared-Sensor Chip with 4 Built-In Amplifiers for use in Atmospheric-Pressure Conditions
H.Kawanishi, K.Hishinuma, M.Kimura, N.Motai, Y.Soutome, T.Tsukii, Y.Ishikawa, T.Katai, N.Hashiba
Seiko NPC, Tokyo, Japan, Seiko NPC, Tochigi, Japan
64- and 256-element thermopile infrared focal-plane array chips with 4 built-in amplifiers are fabricated in a molybdenum-gate CMOS process with MEMS capabilities.
The responsivity of a 64-element chip at 500K black-body temperature with no window is 146 to 195V/W. The 64-element chip is assembled in a compact TO-5 package with a Si-lens in air.
It achieves 800µV/°C output with 200× amplification at 35°C black-body temperature, and a thermal time-constant of less than 2ms.
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